Photoconductivity of Ge/Si quantum dot photodetectors-Reference-Cited by-同舟云学术

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Photoconductivity of Ge/Si quantum dot photodetectors

Published:2003-10 Issue:5-6 Volume:44 Page:513-516
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Rappaport N.,Finkman E.,Boucaud P.,Sauvage S.,Brunhes T.,Le Thanh V.,Bouchier D.,Schacham S.E.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Intervalence‐subband transition in SiGe/Si multiple quantum wells−normal incident detection

2. Normal incidence hole intersubband quantum well infrared photodetectors in pseudomorphic GexSi1 − x/Si

3. Medium‐wavelength, normal‐incidence, p‐type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K

4. Midinfrared photoconductivity of Ge/Si self-assembled quantum dots

5. Midinfrared Photoconductivity in Ge/Si Self-Assembled Quantum Dots

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1. Spectral response, dark current, and noise analyses in resonant tunneling quantum dot infrared photodetectors;Applied Optics;2016-10-17

2. A Pin-Hole Free Architecture for Vertical Infrared Photodetectors Based on Thin-Film Organic/Inorganic Hybrid Nanocomposite;IEEE Sensors Journal;2016-03

3. Response of Colloidal Quantum Dot Infrared Photodetectors to Modulated Optical Signals;IEEE Sensors Journal;2015-06

4. Modeling of dark current and photo-response in quantum ring intersubband photodetectors;Optical and Quantum Electronics;2015-01-08

5. Plasma Synthesis of Quantum Dots;Nanoscience and Nanotechnology Letters;2013-03-01

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