Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition-Reference-Cited by-同舟云学术

Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition

Author:

Lin Zhiyu¹,Zhang Jincheng¹,Xu Shengrui¹,Chen Zhibin¹,Yang Shuangyong¹,Tian Kun¹,Su Xujun²,Shi Xuefang³,Hao Yue¹

Affiliation:

1. Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China

2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China

3. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, Shaanxi 710071, China

Funder

the Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference25 articles.

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