Local Ga implantation with focused ion beam and ambipolar lateral carrier transport in strained Si1−xGex /Si quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112645
Reference18 articles.
1. Sub-100 nm pattern formation using a novel lithography with SiNx resist by focused ion beam exposure and dry-etching development
2. Maskless ion implantation system for three-dimensional fine doping structures in III–V compound semiconductors
3. Characteristics of submicron patterns fabricated by gallium focused‐ion‐beam sputtering
4. Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical properties
5. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells
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1. Photonic Non-Allied Heterostructure Devices Epitaxially Grown on Si;The Review of Laser Engineering;2007
2. Effects of thermal annealing on the optical properties of Er-ion-implanted AlxGa1−xAs layers grown on GaAs substrates;Applied Surface Science;2000-07
3. High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Pd/n-Si1−xGex Schottky junctions;Applied Physics Letters;2000-06-19
4. Dependence of the structural and optical properties of SixGe1-x/Si heterostructures on the Si substrate temperature and the Ge mole fraction;Journal of Materials Science Letters;1999
5. Deep level properties of erbium implanted epitaxially grown SiGe;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
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