Maskless ion implantation system for three-dimensional fine doping structures in III–V compound semiconductors
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
1. FET fabrication using maskless ion implantation
2. 100 keV focused ion beam system with a E×B mass filter for maskless ion implantation
3. Selective Si and Be implantation in GaAs using a 100 kV mass-separating focused ion beam system with an Au–Si–Be liquid metal ion source
4. Vertical npn transistors by maskless boron implantation
5. Focused Si Ion Implantation in GaAs
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1. Polariton design and modulation via van der Waals/doped semiconductor heterostructures;Nature Communications;2023-12-02
2. Local Ga implantation with focused ion beam and ambipolar lateral carrier transport in strained Si1−xGex /Si quantum wells;Applied Physics Letters;1994-11-14
3. Characteristics of in situ Cl2 etched/regrown GaAs/GaAs interfaces;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-11
4. Nanostructures processing by focused ion beam implantation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1991-11
5. Improved Electron Mobility of Two-Dimensional Electron Gas Formed Area-Selectively in GaAs/AlGaAs Heterostructure by Focused Si Ion Beam Implantation and MBE Overgrowth;Japanese Journal of Applied Physics;1991-01-15
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