Determination of interface state distribution in polysilicon thin film transistors from low-frequency noise measurements: Application to analysis of electrical properties-Reference-Cited by-同舟云学术

Determination of interface state distribution in polysilicon thin film transistors from low-frequency noise measurements: Application to analysis of electrical properties

Published:2006-09 Issue:5 Volume:100 Page:054504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Pichon L.,Boukhenoufa A.,Cordier C.,Cretu B.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2335395

Reference18 articles.

1. The electrical properties of polycrystalline silicon films

2. Field-effect analysis for the determination of gap-state density and Fermi-level temperature dependence in polycrystalline silicon

3. Determination of bulk states and interface states distributions in polycrystalline silicon thin‐film transistors

4. Density of states in the channel material of low temperature polycrystalline silicon thin film transistors

5. Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states

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