Damage accumulation during high‐dose, O+implantation in Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109894
Reference14 articles.
1. An Overview Of SOI By Implantation Of Oxygen: Materials, Devices And Circuits
2. Silicon on Insulator Formed By O+ OR N+ Ion Implantation
3. Total Dose Characterizations of CMOS Devices in Oxygen Implanted Silicon-on-Insulator
4. Radiation-Hardened JFET Devices and CMOS Circuits Fabricated in SOI Films
5. High-Quality SOI by Oxygen Implantation into Silicon
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1. Defect Engineering for SIMOX Processing;Solid State Phenomena;2007-10
2. Damage accumulation in neon implanted silicon;Journal of Applied Physics;2006-08-15
3. Study of Si-Implanted and Thermally Annealed Layers of Silicon by Using X-ray Grazing Incidence Methods;Acta Physica Polonica A;2002-05
4. Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures: Evidence of ion beam induced annealing;Journal of Applied Physics;2001-01
5. Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures;Journal of Applied Physics;2000-08-15
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