Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures: Evidence of ion beam induced annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1330254
Reference11 articles.
1. Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and Dose
2. The role of defect excesses in damage formation in Si during ion implantation at elevated temperature
3. Damage accumulation during high‐dose, O+implantation in Si
4. Ion-induced damage and amorphization in Si
5. Defect formation in high dose oxygen implanted silicon
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2. Effect of excess vacancy concentration on As and Sb doping in Si;Journal of Physics D: Applied Physics;2009-07-31
3. HI-ERDA, Micro-Raman and HRXRD studies of buried silicon oxynitride layers synthesized by dual ion implantation;Vacuum;2009-05
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