Electron transport properties of a strained Si layer on a relaxed Si1−xGexsubstrate by Monte Carlo simulation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109278
Reference8 articles.
1. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
2. High-transconductance n-type Si/SiGe modulation-doped field-effect transistors
3. Magnetotransport measurements and low-temperature scattering times of electron gases in high-quality Si/Si1−xGexheterostructures
4. Physics and applications of GexSi1-x/Si strained-layer heterostructures
5. Physics and applications of GexSi1-x/Si strained-layer heterostructures
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