Double Barrier Height Nature of Ti/p-Type Strained Si-On-Insulator Schottky Diode and Its Low Frequency Noise Characteristics-Reference-Cited by-同舟云学术

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Double Barrier Height Nature of Ti/p-Type Strained Si-On-Insulator Schottky Diode and Its Low Frequency Noise Characteristics

Published:2017-10-01 Issue:10 Volume:17 Page:7107-7114
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Jyothi I¹,Lee Hoon-Ki¹,Janardhanam V¹,Lee Sung-Nam²,Choi Chel-Jong¹

Affiliation:

1. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea

2. Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-793, Republic of Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of thermal annealing on the electronic parameters of Al/p-Si/Cu double Schottky barrier heights;Physica B: Condensed Matter;2023-05

2. Double parallel barrier height behavior of Au/Poly (linoleic acid)-g-poly (methyl methacrylate) (PLiMMA)/n-Si structure;Microelectronics Reliability;2019-08

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