Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3080157
Reference20 articles.
1. Electrical resistivity and hall effect of single crystals of GaTe and GaSe
2. Some Optical Properties of Layer-Type Semiconductor GaTe
3. Schottky barrier and interface formation of metal–GaTe(001) interfaces
4. Annealing Behavior of Deep Trap Level in p-GaTe
5. Schottky barriers on anisotropic semiconductor GaTe
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