Strain-controlled synthesis of ultrathin hexagonal GaTe/MoS2 heterostructure for sensitive photodetection-Reference-Cited by-同舟云学术

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Strain-controlled synthesis of ultrathin hexagonal GaTe/MoS2 heterostructure for sensitive photodetection

Published:2021-09 Issue:9 Volume:24 Page:103031
ISSN:2589-0042
Container-title:iScience
language:en
Short-container-title:iScience

Author:

Li Fang,Chen Mingxing,Wang Yajuan,Zhu Xiaoli,Zhang Xuehong,Zou Zixing,Zhang Danliang,Yi Jiali,Li Ziwei^ORCID,Li Dong,Pan Anlian^ORCID

Publisher

Elsevier BV

Subject

Multidisciplinary

Reference42 articles.

1. Projector augmented-wave method;Blöchl;Phys. Rev. B,1994

2. Synthesis of highly anisotropic semiconducting GaTe nanomaterials and emerging properties enabled by epitaxy;Cai;Adv. Mater.,2017

3. Abnormal band bowing effects in phase instability crossover region of GaSe1-xTex nanomaterials;Cai;Nat. Commun.,2018

4. Phase patterning for ohmic homojunction contact in MoTe2;Cho;Science,2015

5. Deep levels in GaTe and GaTe:In crystals investigated by deep-Level transient spectroscopy and photoluminescence;Cui;J. Appl. Phys.,2009

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