Enhanced strain relaxation in a two-step process of GexSi1−x/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1734683
Reference14 articles.
1. Novel dislocation structure and surface morphology effects in relaxed Ge/Si-Ge(graded)/Si structures
2. SiGe-based FETs: buffer issues and device results
3. Line, point and surface defect morphology of graded, relaxed GeSi alloys on Si substrates
4. X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (⩽100nm) using a low temperature growth step
5. Enhanced strain relaxation in Si/GexSi1−x/Si heterostructures via point‐defect concentrations introduced by ion implantation
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