Quenched‐in defect removal through silicide formation by rapid thermal processing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104950
Reference14 articles.
1. Electronic Defects in Silicon after Transient Isothermal Annealing
2. Quenched‐in defects in flashlamp‐annealed silicon
3. Defect‐state generation in Czochralski‐grown (100) silicon rapidly annealed with incoherent light
4. Titanium diffusion in silicon
5. High and Low Temperature Measurements of the Chromium Diffusivity in Silicon
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