Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1448887
Reference21 articles.
1. Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate
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3. Prevention of gain saturation by multi-layer quantum dot lasers
4. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
5. Coarsening of Self-Assembled Ge Quantum Dots on Si(001)
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1. The effect of post-growth interruption on the formation of InGaAs/GaAs quantum dots obtained by MOVPE;Journal of Physics: Conference Series;2019-11-01
2. A tunable external cavity laser operating at excited states of bimodal-sized quantum-dot;Japanese Journal of Applied Physics;2019-04-26
3. Stranski–Krastanov mechanism of growth and the effect of misfit sign on quantum dots nucleation;Surface Science;2017-10
4. High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots;Optics Express;2016-12-09
5. Bimodal-sized quantum dots for broad spectral bandwidth emitter;Optics Express;2015-12-04
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