The effect of post-growth interruption on the formation of InGaAs/GaAs quantum dots obtained by MOVPE

Abstract

Abstract In this work, the study of formation regimes of In0.8Ga0.2As quantum dots on GaAs surface by metallorganic vapour-phase epitaxy has been carried out. The influence of post-growth interruption after the quantum dots deposition on the optical and physical properties of the formed objects has been investigated. It has been established that the interruption time of 2-5 seconds is optimal for the In0.8Ga0.2As/GaAs material system and growth conditions. For the chosen interruption time, the quality of formed quantum dots and their physical sizes were estimated using transmission electron microscopy: lateral size is 10 – 20 nm, height is not exceeding 5 nm and concentration is ∼9.8·1010 cm−2.