Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain-balance technology-Reference-Cited by-同舟云学术

Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain-balance technology

Published:2016-06-14 Issue:9 Volume:24 Page:1261-1271
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Kalyuzhnyy Nikolay A.¹^ORCID,Mintairov Sergey A.¹,Salii Roman A.¹,Nadtochiy Alexey M.¹²,Payusov Alexey S.¹²,Brunkov Pavel N.¹²,Nevedomsky Vladimir N.¹,Shvarts Maxim Z.¹,Martí Antonio³,Andreev Viacheslav M.¹,Luque Antonio¹³

Affiliation:

1. Ioffe Institute; Polytechnicheskaya str. 26 194021 St. Petersburg Russia

2. St Petersburg Academic University; Hlopina str. 8/3 194021 St. Petersburg Russia

3. Polytechnic University of Madrid; Ciudad Universitaria 28040 Madrid Spain

Funder

Russian Ministry of Education and Science

Spanish National Research Plan

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Third generation photovoltaics: solar cells for 2020 and beyond;Green;Physica E: Low-dimensional Systems and Nanostructures,2002

2. Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels;Luque;Physical Review Letters,1997

3. Quantum dot solar cells;Nozik;Physica,2002

4. Marti A Cuadra L Luque A IEEE: quantum dot intermediate band solar cell 2000

5. Solar cells based on quantum dots: multiple exciton generation and intermediate bands;Luque;MRS Bulletin,2007

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of the Photoelectric Characteristics of GaAs Solar Cells with Different InGaAs Quantum Dot Array Positioning in the i-Region;Technical Physics Letters;2023-12

2. Band structure and strain distribution of InAs quantum dots encapsulated in (Al)GaAs asymmetric matrixes;Journal of Vacuum Science & Technology A;2023-07-01

3. Influence of QD array positioning in GaAs solar cell p-n junction on their photoelectric characteristics;Journal of Physics: Conference Series;2021-11-01

4. Optical characteristics of type-II hexagonal-shaped GaSb quantum dots on GaAs synthesized using nanowire self-growth mechanism from Ga metal droplet;Scientific Reports;2021-04-08

5. Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate;Nanomaterials;2021-04-06