Optical study of Ar+implantation‐induced damage in GaAs/GaAlAs heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351911
Reference8 articles.
1. Carrier capture in intermixed quantum wires with sharp lateral confinement
2. Optical characterization of selectively intermixed GaAs/GaAlAs quantum wires by Ga+masked implantation
3. Channeling effects for silicon implantation into large‐diameter gallium arsenide substrates
4. Mixing inhibition and crystalline defects in heavily Si‐doped AlAs/GaAs superlattices
5. Implantation damage in GaAs‐AlAs superlattices of different layer thickness
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Lateral band gap engineering by focused ion beam implantation for optoelectronic devices;SPIE Proceedings;1998-12-04
2. Focused ion beam implantation for opto- and microelectronic devices;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-07
3. Focused ion-beam implantation induced thermal quantum-well intermixing for monolithic optoelectronic device integration;IEEE Journal of Selected Topics in Quantum Electronics;1998
4. Chapter 7 Ion Implantation into Quantum-Well Structures;Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization;1997
5. A closed UHV focused ion beam patterning and MBE regrowth technique;Materials Science and Engineering: B;1995-12
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