Mixing inhibition and crystalline defects in heavily Si‐doped AlAs/GaAs superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100183
Reference19 articles.
1. Disorder of an AlAs‐GaAs superlattice by silicon implantation
2. Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
3. Dose‐dependent mixing of AlAs‐GaAs superlattices by Si ion implantation
4. Kinetics of silicon‐induced mixing of AlAs‐GaAs superlattices
5. Defect structure and intermixing of ion‐implanted AlxGa1−xAs/GaAs superlattices
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1. The Fermi level effect in III–V intermixing: The final nail in the coffin?;Journal of Applied Physics;1997-03
2. Self-Diffusion Studies using Semiconductor Isotope Heterostructures;Defect and Diffusion Forum;1997-01
3. The control and evaluation of blue shift in GaInAs/GaInAsP multiple quantum well structures for integrated lasers and Stark-effect modulators;Semiconductor Science and Technology;1993-06-02
4. Vacancy‐mediated disordering of AlGaAs‐GaAs superlattices by group IV or VI impurity in‐diffusion;Applied Physics Letters;1993-03-29
5. Optical study of Ar+implantation‐induced damage in GaAs/GaAlAs heterostructures;Journal of Applied Physics;1992-12-15
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