Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulation-Reference-Cited by-同舟云学术

Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulation

Published:2022-12-19 Issue:25 Volume:121 Page:253501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kondo Ryosuke¹^ORCID,Yabutani Ayumu¹,Omori Tomoya¹,Yamada Kazuki¹,Matsubara Eri¹,Hasegawa Ryota¹,Nishibayashi Toma¹,Iwayama Sho¹²,Takeuchi Tetsuya¹^ORCID,Kamiyama Satoshi¹,Miyake Hideto²^ORCID,Iwaya Motoaki¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Meijo University, Nagoya 468-8502, Japan

2. Graduate School of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan

Abstract

In this study, AlGaN-based ultraviolet-B band laser diodes with 150-mW peak output power in pulsed operation were demonstrated at room temperature. The oscillation wavelength, differential quantum efficiency, and slope efficiency of a laser diode were 300 nm, 3.6%, and 0.15 W/A, respectively. These results were obtained by increasing the injection efficiency and decreasing the positive fixed polarization charge formed at the interface between a p-side waveguide layer and an electron blocking layer when polarization doping is formed in a p-AlGaN cladding layer.

Funder

MEXT Private University Research Branding Project

JSPS KAKENHI

JST CREST

NEDO Feasibility Study Program

JST A-step Project

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0135033