Atomic-force-microscopy investigation of the formation and evolution of Ge islands on GexSi1−x strained layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126986
Reference8 articles.
1. Competing relaxation mechanisms in strained layers
2. Spontaneous Ordering of Arrays of Coherent Strained Islands
3. Dislocation-Free Island Formation in Heteroepitaxial Growth: A Study at Equilibrium
4. Spontaneous self-embedding of three-dimensional SiGe islands
5. Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Probing the composition of Ge dots and Si∕Si1−xGex island superlattices;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-05
2. Advances in the growth and characterization of Ge quantum dots and islands;Journal of Materials Research;2005-12-01
3. 1.55-μm Ge islands resonant-cavity-enhanced narrowband detector;SPIE Proceedings;2005-01-17
4. 1.55μmGe islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror;Applied Physics Letters;2004-10-04
5. Research progress of self-organized Ge quantum dots on Si substrate*;Progress in Natural Science;2004-05-01
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