Probing the composition of Ge dots and Si∕Si1−xGex island superlattices-Reference-Cited by-同舟云学术

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Probing the composition of Ge dots and Si∕Si1−xGex island superlattices

Published:2006-05 Issue:3 Volume:24 Page:663-667
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Baribeau J.-M.,Wu X.,Lockwood D. J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.2186658

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures;Materials Science in Semiconductor Processing;2017-01

2. Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation;Journal of Applied Physics;2014-07-07

3. Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters;Applied Physics Letters;2013-07-15

4. Silicon-Based Light Sources;Handbook of Silicon Photonics;2013-04-09

5. Morphology and growth of capped Ge/Si quantum dots;Journal of Nanoparticle Research;2013-04-04

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