Research progress of self-organized Ge quantum dots on Si substrate*
Author:
Publisher
Informa UK Limited
Subject
General Materials Science
Link
http://www.tandfonline.com/doi/pdf/10.1080/10020070412331343671
Reference14 articles.
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2. WangQ.M.The prospect of the silicon-based optoelectronics in the 21st century optoelectronics Technology & Information 200013211
3. Bean, J.C. (1992) Silicon-based semiconductor heterostructures: column IV bandgap engineering Proceedings of IEEE, 80(4), pp. 571 - 571.
4. EagleshamD.J.Dislocation-free Stranski-Krastanow growth of Ge on Si(100) Phys. Rev. Lett. 1990641619431943
5. HuangC.J.Shape evolution of Ge/Si(001) islands induced by strain-driven alloying Appl. Phys. Lett. 2001782438813881
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2. Small-size Ge/Si(001) Quantum Dots Grown by Molecular Beam Epitaxy;Acta Physico-Chimica Sinica;2007
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4. 1.55-μm resonant cavity enhanced photodiode based on MBE grown Ge quantum dots;Thin Solid Films;2006-06
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