Effect of crystal orientation and doping on the activation energy for GaAs oxide growth by liquid phase method
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372228
Reference20 articles.
1. Liquid Phase Chemical-Enhanced Oxidation for GaAs Operated Near Room Temperature
2. Improved electrical characteristics of CoSi2 using HF-vapor pretreatment
3. Thermal oxidation of GaAs
4. Near-Room-Temperature Selective Oxidation on GaAs Using Photoresist as a Mask
5. High‐pressure thermal oxidation ofn‐GaAs in an atmosphere of oxygen and water vapor
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1. Improvement of Impact Ionization Effect and Subthreshold Current in InAlAs/InGaAs Metal–Oxide–Semiconductor Metamorphic HEMT With a Liquid-Phase Oxidized InAlAs as Gate Insulator;IEEE Transactions on Electron Devices;2007-03
2. Liquid phase oxidation for InGaP/GaAs HBT passivation;Semiconductor Science and Technology;2006-07-11
3. Study of diffusion barriers for Au metal on liquid phase oxidized GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
4. Improved breakdown voltage and impact ionization in InAlAs∕InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate;Applied Physics Letters;2005-12-26
5. AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid phase oxidized AlGaAs as gate dielectric;Solid-State Electronics;2005-02
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