Hysteresis with nonequilibrium characteristics in sidegating effect of GaAs devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372038
Reference8 articles.
1. Current‐controlled negative differential conductivity in semi‐insulating GaAs
2. Impact ionization of deep traps in semi‐insulating GaAs substrates
3. Inclusion of impact ionization in the backgating of GaAs FETs
4. Schottky contact effects in the sidegating effect of GaAs devices
5. Sidegating effect of GaAs MESFETs and leakage current in a semi-insulating GaAs substrate
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1. Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias;Journal of Zhejiang University SCIENCE C;2011-07
2. Low-frequency noises in GaAs MESFET’s currents associated with substrate conductivity and channel-substrate junction;Chinese Science Bulletin;2011-04
3. Influence of the microstructure on the charge transport in semiconductor gas discharge electronic devices;Superlattices and Microstructures;2010-06
4. Influence of the gas medium on the nonlinear electrical characteristics of semi-insulating GaAs;physica status solidi (a);2009-07-24
5. Memory effect in semiconductor gas discharge electronic devices;Journal of Physics D: Applied Physics;2008-10-29
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