Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias
Author:
Publisher
Zhejiang University Press
Subject
General Engineering
Link
http://link.springer.com/content/pdf/10.1631/jzus.C1000312.pdf
Reference15 articles.
1. Birbas, A.N., Brunn, B., van Rheenen, A.D., Gopinath, A., Chen, C.L., Smith, F., 1991. Low-frequency noise in GaAs MESFETs related to backgating effects. IEE Proc. G Circ. Dev. Syst., 138(2):175–178. [doi:10.1049/ip-g-2.1991.0033]
2. Chiu, H.C., Wei, C.C., Cheng, C.S., Wu, Y.F., 2008. Phase-noise improvement of GaAs pHEMT k-band voltage-controlled oscillator using tunable field-plate voltage technology. IEEE Electron Dev. Lett., 29(5):426–429. [doi:10.1109/LED.2008.920150]
3. Ding, Y., Lu, S.L., Zhao, F.C., 2005. Modulation of low-frequency oscillations in GaAs MESFETs’ channel current by sidegating bias. Chin. Sci. Bull., 50(9):932–935. [doi:10.1360/982004-413]
4. Dobrzański, L., Wolosiak, Z., 2000. On the origin of low frequency noise in GaAs metal-semiconductor field-effect transistors. J. Appl. Phys., 87(1):517–521. [doi:10.1063/1.371892]
5. Gorev, N.B., Kodzhespirova, I.F., Privalov, E.N., Khuchua, N., Khvedelidze, I., Shur, M.S., 2007. Photocapacitance of selectively doped AlGaAs/GaAs heterostructures containing deep traps. Int. J. High Speed Electron. Syst., 17(1):189–192. [doi:10.1142/S0129156407004412]
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