On the origin of low frequency noise in GaAs metal–semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371892
Reference14 articles.
1. The measurement and analysis of noise in GaAsFETs
2. Comparison of noise of AlGaAs/GaAs HEMTs and GaAs MESFETs
3. and g-r noise in AlGaAs epitaxial layers
4. The linear statistical d.c. model of GaAs MESFET using factor analysis
5. 1/ƒ noise is no surface effect
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2. Physics-based analysis of low frequency drain noise-current in AlxGa1−xN/GaN HFETs;Journal of Physics D: Applied Physics;2014-02-03
3. Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias;Journal of Zhejiang University SCIENCE C;2011-07
4. Room temperature terahertz detection based on bulk plasmons in antenna-coupled GaAs field effect transistors;Applied Physics Letters;2008-06-23
5. LOW FREQUENCY NOISE IN GALLIUM NITRIDE FIELD EFFECT TRANSISTORS;International Journal of High Speed Electronics and Systems;2002-06
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