Impact ionization of deep traps in semi‐insulating GaAs substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344523
Reference15 articles.
1. Mechanism of electrostatic potential conduction in semi‐insulating substrates
2. Backgate-induced characteristics of ion-implanted GaAs MESFET's
3. Computer-aided analysis of GaAs n-i-n structures with a heavily compensated i-layer
4. Mechanism of surface conduction in semi‐insulating GaAs
5. The roles of the surface and bulk of the semi-insulating substrate in low-frequency anomalies of GaAs integrated circuits
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4. Analysis of high field effects on the steady-state current-voltage response of semi-insulating 4H-SiC for photoconductive switch applications;Journal of Applied Physics;2015-09-07
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