Degradation analysis of 1 MeV electron and 3 MeV proton irradiated InGaAs single junction solar cell-Reference-Cited by-同舟云学术

Degradation analysis of 1 MeV electron and 3 MeV proton irradiated InGaAs single junction solar cell

Published:2019-07 Issue:7 Volume:9 Page:075205
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Shen X. B.¹²,Aierken A.¹³^ORCID,Heini M.¹,Mo J. H.³,Lei Q. Q.¹²,Zhao X. F.¹,Sailai M.¹,Xu Y.¹,Tan M.¹,Wu Y. Y.¹,Lu S. L.¹,Li Y. D.¹,Guo Q.¹

Affiliation:

1. Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China

2. University of Chinese Academy of Sciences, No. 19-A Yuquan Road, Shijingshan District, Beijing 100049, People’s Republic of China

3. School of Energy and Environment, Yunnan Normal University, No. 756 Juxian Road, Chenggong District, Kunming 650500, People’s Republic of China

Funder

Director Foundation of Xinjiang Technical Institute of Physics and Chemistry, CAS

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5094472

Reference29 articles.

1. Advances in High-Efficiency III-V Multijunction Solar Cells

2. Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy

3. Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

4. Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency

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