Predictive modeling of low solubility semiconductor alloys
Author:
Affiliation:
1. Department of Materials Science and Department of Applied Physics, University of Michigan, Ann Arbor, Michigan 48104, USA
Funder
NSF SCREMS: Scientific Computing and Mathematics at University of Michigan
Rackham Merit Fellowship
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4962849
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1. Valence-band anticrossing in mismatched III-V semiconductor alloys
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3. Optical and electrical characterization of InGaBiAs for use as a mid-infrared optoelectronic material
4. Effects of molecular beam epitaxy growth conditions on composition and optical properties of InxGa1−xBiyAs1−y
5. Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications
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