Photoluminescence from Mg‐implanted, epitaxial, and semi‐insulating InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328787
Reference13 articles.
1. Ion‐implantedn‐ andp‐type layers in InP
2. The effect of implant temperature on the electrical characteristics of ion implanted indium phosphide
3. Photoluminescence of InP
4. The photoluminescence spectra of excitons bound to group II acceptors in indium phosphide
5. Indium Phosphide
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical and optical characterization of Mg, Mg/P, and Mg/Ar implants into InP:Fe;Journal of Electronic Materials;1995-01
2. Reliable Impurity Identification in Inp;MRS Proceedings;1993
3. Rapid thermal annealing effects on InP grown by the LEC method;Journal of Materials Science;1992-01-01
4. Anomalous photoluminescence and raman scattering behavior in heavily Mg+ ion-implanted InP;Applied Physics A Solids and Surfaces;1991-08
5. MOVPE of InP Using Trimethylindium – Trimethylamine Adduct;Crystal Research and Technology;1991
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