MOVPE of InP Using Trimethylindium – Trimethylamine Adduct
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference28 articles.
1. Metal organic vapour phase epitaxy of indium phosphide
2. MOCVD of indium phosphide and indium gallium arsenide using trimethylindium-trimethylamine adducts
3. Absolute photoionization cross sections of the acceptor state level of chromium in indium phosphide
4. Fe deep level optical spectroscopy in InP
5. Low temperature photoluminescence of lightly Si-doped and undoped MBE GaAs
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Synthesis, X-ray structure and application of bis[allylamine(dimethyl)gallium(III)] as a precursor for the growth of GaP layers by MOVPE;Advanced Materials;1994-10
2. Compositional gradients in GaxIn1−xAs on patterned InP substrates grown by atmospheric-pressure metalorganic vapour phase epitaxy;Journal of Crystal Growth;1994-06
3. A new organoindium precursor for electronic materials;Materials Science and Engineering: B;1993-02
4. Use of high purity trimethylindium-trimethylamine adduct in MOVPE of InP;Journal of Crystal Growth;1992-11
5. MOVPE growth and properties of GaP using nitrogen bridged adduct;Journal of Crystal Growth;1992-03
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