MOCVD of indium phosphide and indium gallium arsenide using trimethylindium-trimethylamine adducts
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
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1. Growth of indium gallium arsenide thin film on silicon substrate by MOCVD technique;AIP Conference Proceedings;2018
2. Interruption time effects on InGaAs/InAlAs superlattices of quantum cascade laser structures grown by MOCVD;Superlattices and Microstructures;2016-12
3. III-V and Related Semiconductor Materials;The Group 13 Metals Aluminium, Gallium, Indium and Thallium: Chemical Patterns and Peculiarities;2011-03-30
4. Zur thermischen Stabilität des Trimethylgallium-Trimethylamin-Addukts;Zeitschrift für Chemie;2010-08-31
5. As-Ga-In (Arsenic-Gallium-Indium);Non-Ferrous Metal Systems. Part 1;2006
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