Deposition of epitaxially oriented films of cubic silicon carbide on silicon by laser ablation: Microstructure of the silicon–silicon‐ carbide interface-Reference-Cited by-同舟云学术

Deposition of epitaxially oriented films of cubic silicon carbide on silicon by laser ablation: Microstructure of the silicon–silicon‐ carbide interface

Published:1995-06-15 Issue:12 Volume:77 Page:6601-6608
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Rimai L.,Ager R.,Weber W. H.,Hangas J.,Samman A.,Zhu W.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.359070

Reference9 articles.

1. Epitaxial Growth and Characterization of β ‐ SiC Thin Films

2. Epitaxial growth of beta -SiC on Si by RTCVD with C/sub 3/H/sub 8/ and SiH/sub 4/

3. Deposition of SiC films by pulsed excimer laser ablation

4. Preparation of oriented silicon carbide films by laser ablation of ceramic silicon carbide targets

5. Preparation of crystallographically aligned layers of silicon carbide by pulsed laser deposition of carbon onto Si wafers

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