Reaction kinetics during the thermal activation of the silicon surface passivation with atomic layer deposited Al2O3
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4865901
Reference37 articles.
1. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
2. Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD
3. Silicon surface passivation by atomic layer deposited Al2O3
4. Excellent silicon surface passivation with 5 Å thin ALD Al2 O3 layers: Influence of different thermal post-deposition treatments
5. Improved quantitative description of Auger recombination in crystalline silicon
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