Quantum fluctuation of tunneling current in individual Ge quantum dots induced by a single-electron transfer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2720756
Reference21 articles.
1. High-density ultrasmall epitaxial Ge islands on Si(111) surfaces with aSiO2coverage
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3. Observation of the quantum-confinement effect in individual Ge nanocrystals on oxidized Si substrates using scanning tunneling spectroscopy
4. Transport spectroscopy of the ultrasmall silicon quantum dot in a single-electron transistor
5. Self-organized strain engineering on GaAs (311)B: Template formation for quantum dot nucleation control
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