Self-organized strain engineering on GaAs (311)B: Template formation for quantum dot nucleation control
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1516637
Reference16 articles.
1. Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates
2. Site-controlled InAs single quantum-dot structures on GaAs surfaces patterned by in situ electron-beam lithography
3. Selective growth of single InAs quantum dots using strain engineering
4. Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)
5. Independent manipulation of density and size of stress-driven self-assembled quantum dots
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2. Quantum fluctuation of tunneling current in individual Ge quantum dots induced by a single-electron transfer;Applied Physics Letters;2007-04-09
3. Multiple confined-state transitions within surface quantum dots by a piezomodulation reflectance study;physica status solidi (a);2007-04
4. Efficient Exciton Transfer from In 0.35 Ga 0.65 As Template into InAs Quantum Dots Grown on GaAs (311) B Substrates;Chinese Physics Letters;2006-04-28
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