Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation-Reference-Cited by-同舟云学术

Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation

Published:2000-07-15 Issue:2 Volume:88 Page:883-888
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chen T. H.,Huang Y. S.,Lin D. Y.,Pollak Fred H.,Goorsky M. S.,Streit D. C.,Wojtowicz M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.373751

Reference26 articles.

1. Overview of recent development of HEMTs in the mm-wave range

2. Improved source resistance in InP-based enhancement-mode HEMTs for high speed digital applications

3. Role of misfit dislocations on pseudomorphic high electron mobility transistors

4. Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs

5. Defects in epitaxial multilayers

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spin-dependent electronic structure of the Co/Al(OP)3interface;New Journal of Physics;2013-11-26

2. Non-destructive, room temperature characterization of wafer-sized III-V semiconductor device structures using contactless electromodulation and wavelength-modulated surface photovoltage spectroscopy;physica status solidi (a);2005-05

3. Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures;Journal of Applied Physics;2001-12-15