Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures-Reference-Cited by-同舟云学术

Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures

Published:2001-12-15 Issue:12 Volume:90 Page:6421-6427
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lin D. Y.,Huang Y. S.,Shou T. S.,Tiong K. K.,Pollak Fred H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1416854

Reference22 articles.

1. Overview of recent development of HEMTs in the mm-wave range

2. Improved source resistance in InP-based enhancement-mode HEMTs for high speed digital applications

3. Linear and nonlinear optical properties of semiconductor quantum wells

4. Many-body effects in the electromodulation spectra of modulation-doped quantum wells: Theory and experiment

5. Carrier effects on the excitonic absorption in GaAs quantum-well structures: Phase-space filling

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