High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III–V nitrides-Reference-Cited by-同舟云学术

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High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III–V nitrides

Published:1997-05-19 Issue:20 Volume:70 Page:2735-2737
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Vispute R. D.,Talyansky V.,Trajanovic Z.,Choopun S.,Downes M.,Sharma R. P.,Venkatesan T.,Woods M. C.,Lareau R. T.,Jones K. A.,Iliadis A. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.119006

Reference18 articles.

1. GaN, AlN, and InN: A review

2. Deposition of high quality wurtzite GaN films over cubic (111) MgAl2O4 substrates using low pressure metalorganic chemical vapor deposition

3. Microstructure of GaN epitaxy on SiC using AlN buffer layers

4. Structural Defects in GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy

5. High quality aluminum nitride epitaxial layers grown on sapphire substrates

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1. Effect of graphene on the surface nanomechanical behavior and subsurface layer of GaN damage during nanogrinding using molecular dynamics simulation;Micro and Nanostructures;2023-12

2. Buffer-free epitaxial growth of ZnO(0001) thin films at room temperature by tetramethylammonium hydroxide pretreatment of α-Al<sub>2</sub>O<sub>3</sub>(0001) substrates;Journal of the Ceramic Society of Japan;2023-08-01

3. Role of insoluble atoms in the formation of a three-dimensional buffer layer in inverted Stranski–Krastanov mode;Journal of Materials Research;2023-01-10

4. Anomalous photovoltaic effect with high fill factor in Fe3+-Li+ co-doped ZnO films;Nano Energy;2022-11

5. Growth of Single-Crystalline ZnO Films on 18%-Lattice-Mismatched Sapphire Substrates Using Buffer Layers with Three-Dimensional Islands;Crystal Growth & Design;2022-05-16

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