Study on threading dislocations blocking mechanism of GaN∕AlxGa1−xN superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2929377
Reference18 articles.
1. AlGaN/GaN high electron mobility transistors on Si(111) substrates
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3. Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes
4. AlGaN layers grown on GaN using strain-relief interlayers
5. The generation of misfit dislocations in facet-controlled growth of AlGaN∕GaN films
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1. Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures;Superlattices and Microstructures;2020-11
2. Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer;Journal of Crystal Growth;2020-04
3. MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template;Applied Sciences;2019-04-27
4. Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes;IEEE Transactions on Nuclear Science;2018-11
5. Investigation of efficiency enhancement in InGaN MQW LED with compositionally step graded GaN/InAlN/GaN multi-layer barrier;Superlattices and Microstructures;2018-04
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