Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer

Author:

Song JieORCID,Choi Joowon,Han Jung

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Nonpolar and semipolar III-nitride light-emitting diodes: achievements and challenges;Masui;IEEE Trans. Electron Devices,2010

2. Strain-induced polarization in wurtzite III-nitride semipolar layers;Romanov;J. Appl. Phys.,2006

3. High-power blue-violet semipolar (2021) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2;Zhao;Appl. Phys Express,2011

4. High-power, low-efficiency-droop semipolar (2021) single-quantum-well blue light-emitting diodes;Pan;Appl. Phys Express,2012

5. High power and high efficiency blue light emitting diode on freestanding semipolar (1011) bulk GaN substrate;Zhong;Appl. Phys. Lett.,2007

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