Effect of process pressure and temperature on ZnON material properties in reactive sputtering-Reference-Cited by-同舟云学术

Effect of process pressure and temperature on ZnON material properties in reactive sputtering

Published:2017-03 Issue:3 Volume:7 Page:035311
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Gao Haibo¹,Zhang Xiaodan¹,Zhao Ying¹,Yan Baojie¹

Affiliation:

1. Institute of Photoelectronic Thin Film Device and Technology, Nankai University, Weijin Road No. 94, Nankai District, Tianjin 300071, People’s Republic of China

Funder

111-Project

Tianjin Reseach Key Program of Application Foundation and Advanced Technology

Ministry of Science and Technology of the People's Republic of China (MOST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4978771

Reference17 articles.

1. Amorphous/Microcrystalline Silicon Thin Film Transistor Characteristics for Large Size Oled Television Driving

2. Four-Thin-Film-Transistor Pixel Circuit for Amorphous-Silicon Active-Matrix Organic Light-Emitting Diode Displays

3. Correlation between gap state density and bias stress reliability of nanocrystalline TFTs comparing with hydrogenated amorphous silicon TFTs

4. Polysilicon TFT technology for active matrix OLED displays

5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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