Correlation between gap state density and bias stress reliability of nanocrystalline TFTs comparing with hydrogenated amorphous silicon TFTs-Reference-Cited by-同舟云学术

Correlation between gap state density and bias stress reliability of nanocrystalline TFTs comparing with hydrogenated amorphous silicon TFTs

Published:2013-02 Issue: Volume:80 Page:72-75
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lee M.H.,Tai C.-W.,Huang J.-J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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5. Lee M H, Chen P S, Hua W-C, Yu C-Y, Tseng Y T, Maikap S, Hsu Y M, Liu CW. Comprehensive low-frequency and RF noise characteristics in strained-Si NMOSFETs. In: IEEE IEDM Tech Dig; 2003. p. 69–72.

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