Recrystallization of silicon film on insulating layers using a laser beam split by a birefringent plate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94878
Reference8 articles.
1. Crystallographic orientation of silicon on an amorphous substrate using an artificial surface‐relief grating and laser crystallization
2. cw laser recrystallization of 〈100〉 Si on amorphous substrates
3. Si Bridging Epitaxy from Si Windows onto SiO2byQ-Switched Ruby Laser Pulse Annealing
4. The use of beam shaping to achieve large‐grain cw laser‐recrystallized polysilicon on amorphous substrates
5. Improved techniques for growth of large‐area single‐crystal Si sheets over SiO2using lateral epitaxy by seeded solidification
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1. Novel Optical Method for Widening Process Window of Phase-Modulated Excimer Laser Crystallization;Japanese Journal of Applied Physics;2008-02-15
2. Soi Materials;Silicon-on-Insulator Technology: Materials to VLSI;2004
3. XeCl excimer laser-annealing effects on APCVD SiO2in a-Si/SiO2and SiO2/a-Si structure;Physica Scripta;1997-01-01
4. Polysilicon thin-film transistors with channel length and width comparable to or smaller than the grain size of the thin film;IEEE Transactions on Electron Devices;1991
5. Artificial Epitaxy (Graphoepitaxy);Oriented Crystallization on Amorphous Substrates;1991
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