Post-growth p-type doping enhancement for ZnSe-based lasers using a Li3N interlayer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1532544
Reference17 articles.
1. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
2. Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth
3. Schottky barrier heights of metals contacting to p-ZnSe
4. Graded band gap ohmic contact top‐ZnSe
5. Ohmic contacts top-type ZnSe using ZnTe/ZnSe multiquantum wells
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