Schottky barrier heights of metals contacting to p-ZnSe
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366049
Reference22 articles.
1. 100 h II-VI blue-green laser diode
2. Graded band gap ohmic contact top‐ZnSe
3. Ohmic contacts top-type ZnSe using ZnTe/ZnSe multiquantum wells
4. Heavily dopedp‐ZnSe:N grown by molecular beam epitaxy
5. Effects of surface cleaning on electrical properties for Ni contacts to p-type ZnSe
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2. Impedance Spectroscopic Analysis of the InSe/ZnSe/InSe Interface;IEEE Transactions on Electron Devices;2017-01
3. Heavy p-type doping of ZnSe thin films using Cu2Se in pulsed laser deposition;Applied Physics Letters;2012-07-23
4. Mechanism for increasing dopant incorporation in semiconductors via doped nanostructures;Physical Review B;2006-05-08
5. Controlling interface reactivity and Schottky barrier height in Au∕ZnSe(001) junctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
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