Temperature behavior of specific contact resistance and resistivity on nitrogen implanted 6H-SiC with titanium silicide ohmic contacts
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369628
Reference18 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
3. Improved oxidation procedures for reduced SiO2/SiC defects
4. Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes
5. Aluminum and boron ion implantations into 6H-SiC epilayers
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