Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode-Reference-Cited by-同舟云学术

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Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

Published:2015-03-02 Issue:9 Volume:106 Page:093505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Baikui¹^ORCID,Tang Xi¹,Chen Kevin J.¹

Affiliation:

1. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong

Funder

Hong Kong Innovation Technology Fund

Research Grants Council, University Grants Committee, Hong Kong (RGC, UGC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4914455

Reference30 articles.

1. Trapping effects in GaN and SiC microwave FETs

2. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

3. Al₂O₃/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

4. Characterization ofVT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs

5. Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

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1. Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs;IEEE Journal of the Electron Devices Society;2024

2. Analysis of V_TH Degradation and Recovery Behaviors of p-GaN Gate HEMTs Under Forward Gate Bias;IEEE Transactions on Electron Devices;2023-06

3. Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light;Science China Information Sciences;2022-10-28

4. Investigation of the threshold voltage instability in normally-off p-GaN/AlGaN/GaN HEMTs by optical analysis;Japanese Journal of Applied Physics;2021-09-07

5. Physical mechanism on the suppression of dynamic resistance degradation by multi-mesa-channel in AlGaN/GaN high electron mobility transistors;Applied Physics Letters;2019-12-23

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