Bias-assisted photoelectrochemical etching of p-GaN at 300 K
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1289807
Reference3 articles.
1. Dopant-selective photoenhanced wet etching of GaN
2. Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching
3. Smooth n-type GaN surfaces by photoenhanced wet etching
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