Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA
Funder
National Science Foundation (NSF)
Türkiye Bilimsel ve Teknolojik Arastirma Kurumu (Scientific and Technological Research Council of Turkey)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4919917
Reference15 articles.
1. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2. Bulk GaN based violet light-emitting diodes with high efficiency at very high current density
3. Auger recombination in InGaN measured by photoluminescence
4. Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions
5. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
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